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this is information on a product in full production. march 2015 docid026003 rev 4 1/17 17 STGW25H120F2, stgwa25h120f2 trench gate field-stop igbt, h series 1200 v, 25 a high speed datasheet - production data figure 1. internal schematic diagram features ? maximum junction temperature: t j = 175 c ? high speed switching series ? minimized tail current ? v ce(sat) = 2.1 v (typ.) @ i c = 25 a ? 5 s minimum short circuit withstand time at t j =150 c ? tight parameters distribution ? safe paralleling ? low thermal resistance applications ? uninterruptible power supply ? welding machines ? photovoltaic inverters ? power factor correction ? high frequency converters description these devices are igbts developed using an advanced proprietary trench gate field-stop structure. these devices are part of the h series of igbts, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. moreover, a slightly positive v ce(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. 72 72orqjohdgv c (2) e (3) g (1) sc12850 table 1. device summary order code marking package packaging STGW25H120F2 g25h120f2 to-247 tube stgwa25h120f2 g25h120f2 to-247 long leads tube www.st.com
contents STGW25H120F2, stgwa25h120f2 2/17 docid026003 rev 4 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 to-247, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 to-247 long leads, package information . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
docid026003 rev 4 3/17 STGW25H120F2, stgwa25h120f2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c continuous collector current at t c = 25 c 50 a i c continuous collector current at t c = 100 c 25 a i cp (1) 1. pulse width limited by ma ximum junction temperature pulsed collector current 100 a v ge gate-emitter voltage 20 v p tot total dissipation at t c = 25 c 375 w t stg storage temperature range -55 to 150 c t j operating junction temperature -55 to 175 c table 3. thermal data symbol parameter value unit r thjc thermal resistance junction-case 0.4 c/w r thja thermal resistance junction-ambient 50 c/w
electrical characteristics STGW25H120F2, stgwa25h120f2 4/17 docid026003 rev 4 2 electrical characteristics t j = 25 c unless otherwise specified. table 4. static characteristics symbol parameter test conditions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 2 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 25 a 2.1 2.6 v v ge = 15 v, i c = 25 a t j = 125 c 2.4 v ge = 15 v, i c = 25 a t j = 175 c 2.5 v ge(th) gate threshold voltage v ce = v ge , i c = 1 ma 5 6 7 v i ces collector cut-off current (v ge = 0) v ce = 1200 v 25 a i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 250 na table 5. dynamic characteristics symbol parameter test conditions min. typ. max. unit c ies input capacitance v ce = 25 v, f = 1 mhz, v ge = 0 -2010- pf c oes output capacitance - 146 - pf c res reverse transfer capacitance -49-pf q g total gate charge v cc = 960 v, i c = 25 a, v ge = 15 v, see figure 23 -100-nc q ge gate-emitter charge - 11 - nc q gc gate-collector charge - 52 - nc
docid026003 rev 4 5/17 STGW25H120F2, stgwa25h120f2 electrical characteristics table 6. switching characteristics (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v ce = 600 v, i c = 25 a, r g = 10 , v ge = 15 v, see figure 22 -29-ns t r current rise time - 12 - ns (di/dt) on turn-on current slope - 1774 - a/s t d(off) turn-off delay time 130 - ns t f current fall time - 106 - ns e on (1) 1. energy losses include reverse recovery of the external diode. turn-on switching losses - 0.6 - mj e off (2) 2. turn-off losses include also the tail of the collector current. turn-off switching losses - 0.7 - mj e ts total switching losses - 1.3 - mj t d(on) turn-on delay time v ce = 600 v, i c = 25 a, r g = 10 , v ge = 15 v, t j = 175 c, see figure 22 - 27.5 - ns t r current rise time - 13.5 - ns (di/dt) on turn-on current slope - 1522 - a/s t d(off) turn-off delay time - 139 - ns t f current fall time - 200 - ns e on (1) turn-on switching losses - 1.05 - mj e off (2) turn-off switching losses - 1.65 - mj e ts total switching losses - 2.7 - mj t sc short-circuit withstand time v ce = 600 v, v ge = 15 v, t j = 150 c, 5- s
electrical characteristics STGW25H120F2, stgwa25h120f2 6/17 docid026003 rev 4 2.1 electrical characteristics (curves) figure 2. power dissipation vs. case temperature figure 3. collector current vs. case temperature 3 wrw 7 & ?& : 9 *( ?97 - ??& *,3*)65 , & 7 & ?& $ 9 *( ?97 - ??& *,3*)65 figure 4. output characteristics (t j = 25c) figure 5. output characteristics (t j = 175c) , & 9 &( 9 $ 9 *( 9 9 9 9 9 *,3*)65 , & 9 &( 9 $ 9 *( 9 9 9 9 9 *,3*)65 figure 6. v ce(sat) vs. junction temperature figure 7. v ce(sat) vs. collector current 9 &(vdw 7 - ?& 9 9 *( 9 , & $ , & $ , & $ *,3*)65 9 &(vdw , & $ 9 9 *( 9 7 - ?& 7 - ?& 7 - ?& *,3*)65
docid026003 rev 4 7/17 STGW25H120F2, stgwa25h120f2 electrical characteristics figure 8. collector current vs. switching frequency figure 9. forward bias safe operating area ,f>$@ i>n+]@ * ? uhfwdqjxodufxuuhqwvkdsh gxw\f\foh 9 && 95 9 *( 97 - ?& 7f ? & 7f ? & *,3*)65 , & 9 &( 9 $ ?v ?v pv 6lqjohsxovh 7f ?&7 - ??& 9 *( 9 ?v *,3*)65 figure 10. transfer characteristics figure 11. normalized v ge(th) vs junction temperature , & 9 *( 9 $ 7 - ?& 7 - ?& 9 &( 9 *,3*)65 9 *(wk 7 - ?& qrup , & p$ 9 &( 9 *( *,3*)65 figure 12. normalized v (br)ces vs. junction temperature figure 13. capacitance variation 9 %5&(6 7 - ?& qrup , & p$ *,3*)65 & 9 &( 9 s) & lhv & rhv & uhv i 0+]9 *( *,3*)65
electrical characteristics STGW25H120F2, stgwa25h120f2 8/17 docid026003 rev 4 figure 14. gate charge vs. gate-emitter voltage figure 15. switching loss vs collector current 9 *( 4 j q& 9 , & $ , *( p$ 9 && 9 *,3*)65 ( , & $ ?- ( 21 9 && 99 *( 9 5 * 7 - ?& ( 2)) *,3*)65 figure 16. switching loss vs gate resistance figure 17. switching loss vs temperature ( 5 * ?- ( 2)) 9 && 99 *( 9 , & $7 - ?& ( 21 *,3*)65 ( 7 - ?& ?- ( 2)) 9 && 99 *( 9 5 * , & $ ( 21 *,3*)65 figure 18. switching loss vs collector-emitter voltage figure 19. switching times vs. collector current ( 9 &( 9 ?- ( 2)) 7 - ?&9 *( 9 5 * , & $ ( 21 *,3*)65 w , & $ qv w i 7 - ?&9 *( 9 5 * 9 && 9 w grii w u w grq *,3*)65
docid026003 rev 4 9/17 STGW25H120F2, stgwa25h120f2 electrical characteristics figure 20. switching times vs. gate resistance w 5 * qv w i 7 - ?&9 *( 9 , & $9 && 9 w grq w grii w u *,3*)65
electrical characteristics STGW25H120F2, stgwa25h120f2 10/17 docid026003 rev 4 figure 21. thermal impedance zthto2t_a 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) 10 -2 10 -1 k single pulse d=0.5 0.01 0.02 0.05 0.1 0.2
docid026003 rev 4 11/17 STGW25H120F2, stgwa25h120f2 test circuits 3 test circuits figure 22. test circuit for inductive load switching figure 23. gate charge test circuit figure 24. switching waveform am01504v1 am01505v1 k k k k k k am01506v1 90% 10% 90% 10% v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcross 90% 10%
package information STGW25H120F2, stgwa25h120f2 12/17 docid026003 rev 4 4 package information in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. 4.1 to-247, package information figure 25. to-247 outline 0075325_h
docid026003 rev 4 13/17 STGW25H120F2, stgwa25h120f2 package information table 7. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
package information STGW25H120F2, stgwa25h120f2 14/17 docid026003 rev 4 4.2 to-247 long leads, package information figure 26. to-247 long leads outline 8463846_a_f
docid026003 rev 4 15/17 STGW25H120F2, stgwa25h120f2 package information table 8. to-247 long leads mechanical data dim. mm min. typ. max. a4.905.005.10 a1 2.31 2.41 2.51 a2 1.90 2.00 2.10 b1.16 1.26 b2 3.25 b3 2.25 c0.59 0.66 d 20.90 21.00 21.10 e 15.70 15.80 15.90 e2 4.90 5.00 5.10 e3 2.40 2.50 2.60 e5.345.445.54 l 19.80 19.92 20.10 l1 4.30 p3.503.603.70 q5.60 6.00 s6.056.156.25
revision history STGW25H120F2, stgwa25h120f2 16/17 docid026003 rev 4 5 revision history table 9. document revision history date revision changes 28-feb-2014 1 initial release. 31-mar-2014 2 document status changed from preliminary to production data. updated table 4: static characteristics and table 6: switching characteristics (inductive load) . added section 2.1: electrical characteristics (curves) . 06-mar-2015 3 added 4.2: to-247 long leads, package information updated features and figure 23.: gate charge test circuit minor text changes 23-mar-2015 4 removed figures with diode minor text changes.
docid026003 rev 4 17/17 STGW25H120F2, stgwa25h120f2 important notice ? please read carefully stmicroelectronics nv and its subsidiaries (?st?) reserve the right to make changes, corrections, enhancements, modifications, and improvements to st products and/or to this document at any time without notice. purchasers should obtain the latest relevant in formation on st products before placing orders. st products are sold pursuant to st?s terms and conditions of sale in place at the time of o rder acknowledgement. purchasers are solely responsible for the choice, selection, and use of st products and st assumes no liability for application assistance or the design of purchasers? products. no license, express or implied, to any intellectual property right is granted by st herein. resale of st products with provisions different from the information set forth herein shall void any warranty granted by st for such product. st and the st logo are trademarks of st. all other product or service names are the property of their respective owners. information in this document supersedes and replaces information previously supplied in any prior versions of this document. ? 2015 stmicroelectronics ? all rights reserved

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